uhp grade carbon graphite electrodes for arc furnaces

Your wise choice for semiconductor materials uhp grade carbon graphite electrodes for arc furnaces

In power electronics, the efficiency of semiconductors based on elemental silicon will be much higher. A physicist at the University of Basel, the Paul Scherrer Institute and ABB explained in the scientific journal “Applied Physics Letters” the reasons for preventing the combined use of silicon and carbon. Datong uhp grade carbon graphite electrodes for arc furnaces is your wise choice. Energy consumption is increasing globally, and sustainable energy supply such as wind and solar energy is becoming more and more important. However, electricity is usually generated far away from consumers. Therefore, power distribution and transportation systems are as important as substations and power converters that convert the generated direct current into alternating current.

Save a lot of money Modern power electronic equipment must be able to handle large currents and high voltages. Transistors made of semiconductor materials currently used for field-effect transistors are now mainly based on silicon technology. However, the use of SiC on silicon has significant physical and chemical advantages: In addition to higher heat resistance, this material can also provide better energy efficiency, thereby saving significant costs. As we all know, these advantages are obviously affected by the interface between uhp grade carbon graphite electrodes for arc furnaces and the insulating material silicon dioxide. This damage is based on tiny irregular carbon ring clusters crystallized in the crystal lattice, which has been experimentally proved by researchers led by the Department of Physics of the University of Basel of the Swiss Institute of Science and the Paul Scherrer Institute. Using atomic force microscope analysis and Raman spectroscopy, they showed that the oxidation process caused problems near the interface. Interfering carbon clusters with a size of only a few nanometers are formed during the oxidation process of uhp grade carbon graphite electrodes for arc furnaces to silicon dioxide at high temperatures. “If we change certain parameters during oxidation, we can influence what happens,” said doctoral student Dipanwita Dutta. For example, the nitrous oxide atmosphere during the heating process resulted in significantly fewer carbon clusters. The experimental results were confirmed by the team led by the Physics Department of the University of Basel and the Swiss Institute of Science Stefan Gdecker. Computer simulations confirmed the structural and chemical changes caused by the graphite carbon atoms observed in the experiment.

In addition to experiments, we have also gained atomic insights in the generation and its impact on the flow of electrons in semiconductor materials, making better use of electricity. Our research has provided important insights for the advancement of field-effect transistors based on the graphite electrode. Therefore, we look forward to making a significant contribution to better use of electricity,” Jung commented. This work was initiated as part of the Nano Argovia Applied Research Project. Disclaimer: The text and pictures are all from the Internet. Please contact us if there is any infringement. Deleted by the webmaster. Thank you!