uhp dia 500 mm graphite electrode
The role of uhp dia 500 mm graphite electrode in three major areas
The role of uhp dia 500 mm graphite electrode in three major areas. Mankind first discovered silicon carbide in a meteorite in 1905. Now it is mainly derived from artificial synthesis. Silicon carbide has many uses and has a large industry span. It can be used for monocrystalline silicon, polycrystalline silicon, Engineering processing materials for potassium arsenide, quartz crystal, etc., solar photovoltaic industry, semiconductor industry, and piezoelectric crystal industry. Application in the semiconductor field uhp dia 500 mm graphite electrode one-dimensional nanomaterials have more unique excellent performance and broader application prospects due to their own microscopic morphology and crystal structure, and are generally considered to be expected to become the third-generation wide band gap An important unit of semiconductor materials. The third-generation semiconductor materials are wide-bandgap semiconductor materials, also known as high-temperature semiconductor materials, which mainly include silicon carbide, gallium nitride, aluminum nitride, zinc oxide, diamond, and so on. This kind of material has the characteristics of wide forbidden band width (forbidden band width greater than 2.2ev), high thermal conductivity, high breakdown electric field, high radiation resistance, high electron saturation rate, etc., suitable for high temperature and high frequency , Anti-radiation and production of high-power devices.
The third-generation semiconductor materials rely on their excellent characteristics, and the future application prospects are very broad. Application in the photovoltaic field Photovoltaic inverter is very important for photovoltaic power generation. It not only has the function of direct-to-ac conversion, but also has the function of maximizing the performance of solar cells and the function of system failure protection. In summary, there are automatic operation and shutdown functions, maximum power tracking control function, anti-single operation function (for grid-connected systems), automatic voltage adjustment function (for grid-connected systems), DC detection function (for grid-connected systems), DC grounding detection Function (for grid-connected system), etc. Domestic inverter manufacturers still have too few applications of new technologies and new devices. Inverters using silicon carbide as power devices have begun to be used in large quantities. The uhp dia 500 mm graphite electrode has very little internal resistance, which can improve the efficiency. High, the switching frequency can reach 10K, and the LC filter and bus capacitance can also be saved. Silicon carbide materials may have a breakthrough in the application of photovoltaic inverters. Applications in the aviation field Silicon carbide is made into uhp dia 500 mm graphite electrode fibers. Silicon carbide fibers are mainly used as high temperature resistant materials and reinforcing materials. High temperature resistant materials include heat shielding materials, high temperature resistant conveyor belts, filters for high temperature gas or molten metal Filter cloth and so on.
When used as a reinforcing material, it is often used in combination with carbon fiber or glass fiber, mainly reinforced metals (such as aluminum) and ceramics, such as brake pads, engine blades, landing gearboxes and fuselage structural materials for jet aircraft. It can be used as sports goods, and its chopped fiber can be used as high-temperature furnace materials.
Uhp dia 500 mm graphite electrode coarse materials can already be supplied in large quantities, but the application of nano-scale silicon carbide powder with extremely high technical content is unlikely to form economies of scale in a short time. The research and development of silicon carbide wafers in my country is still in its infancy. Uhp dia 500 mm graphite electrode wafers are rarely used in China. The development of the silicon carbide material industry lacks the support of downstream application companies. Carry out close cooperation on talent training and technology research and development; strengthen exchanges between enterprises, especially actively participating in international exchange activities to improve the level of enterprise development; pay attention to corporate brand building, and strive to build corporate flagship products.